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 MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES * Guardring for overvoltage protection * Lower power losses, high efficiency * Low forward voltage drop * Low leakage current
3 2 1
* High forward surge capability * High frequency operation * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum
TO-247AD (TO-3P)
PIN 1 PIN 3 PIN 2 CASE
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF IR TJ max. 15 A x 2 90 V, 100 V 265 A 0.67 V 5.0 A 175 C
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum working peak reverse voltage Maximum DC blocking voltage Maximum average forward rectified current total device per diode SYMBOL VRRM VRWM VDC IF(AV) IFSM IRRM EAS dV/dt TJ, TSTG MBR30H90PT 90 90 90 30 15 265 1.0 7.5 10 000 - 65 to + 175 MBR30H100PT 100 100 100 UNIT V V V A A A mJ V/s C
Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode Peak repetitive reverse surge current at tp = 2 s, f = 1 kHz per diode Non-repetitive avalanche energy (IAS = 0.5 A, L = 60 mH) per diode Voltage rate of change at (rated VR) Operating junction and storage temperature range
Document Number: 88678 Revision: 25-Mar-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
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MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Maximum instantaneous forward voltage per diode (1) TEST CONDITIONS IF = 15 A IF = 15 A IF = 30 A IF = 30 A TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C TJ = 25 C TJ = 125 C SYMBOL MBR30H90PT 0.82 0.67 0.93 0.80 5.0 6.0 MBR30H100PT UNIT
VF
V
Maximum instantaneous reverse current at rated DC blocking voltage per diode (1) Note: (1) Pulse test: 300 s pulse width, 1 % duty cycle
IR
A mA
THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
PARAMETER Thermal resistance from junction to case per diode SYMBOL RJC MBR30H90PT 1.6 MBR30H100PT UNIT C/W
ORDERING INFORMATION (Example)
PACKAGE TO-247AD PREFERRED P/N MBR30H100PT-E3/45 UNIT WEIGHT (g) 6.13 PACKAGE CODE 45 BASE QUANTITY 30/tube DELIVERY MODE Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 100
Instantaneous Forward Current (A)
Average Forward Current (A)
10
TJ = 175 C
TJ = 150 C 1 TJ = 125 C TJ = 100 C 0.1 TJ = 25 C 0.01 0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Case Temperature (C)
Instantaneous Forward Voltage (V)
Figure 1. Forward Derating Curve
Figure 2. Typical Instantaneous Forward Characteristics Per Diode
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For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88678 Revision: 25-Mar-08
MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
10 000
10 000 TJ = 150 C
Instantaneous Reverse Current (A)
100
TJ = 125 C TJ = 100 C
Junction Capacitance (pF)
1000
1000
10
1
100
0.1
TJ = 25 C 10 20 40 60 80 100 0.1 1 10 100 1000
0.01
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Figure 3. Typical Reverse Characteristics Per Diode
Figure 4. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30 0.170 (4.3) 0.840 (21.3) 0.820 (20.8) 0.142 (3.6) 0.138 (3.5) 10 TYP. Both Sides 0.078 (1.98) REF. 10
1
2
3 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.118 (3.0) 0.108 (2.7)
1 REF. Both Sides
0.160 (4.1) 0.140 (3.5) 0.795 (20.2) 0.775 (19.6)
0.117 (2.97)
0.225 (5.7) 0.205 (5.2) PIN 1 PIN 3
0.048 (1.22) 0.044 (1.12)
0.030 (0.76) 0.020 (0.51) PIN 2 CASE
Document Number: 88678 Revision: 25-Mar-08
For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com 3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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